APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 1-10 all ratings @ t j = 25c unless otherwise specified these devices are sens itive to electrostatic discharge. proper handing procedures should be followe d. see application note apt0502 on www.microsemi.com v out cr3 q3 g4 e3 e4 g3 cr1 q2 cr2 q1 g2 e1 g1e2 v pos v neg q4 v gnd cr4 fast trench & field stop igbt4 (q1, q2): v ces = 1200v ; i c = 200a @ tc = 80c trench & field stop igbt3 (q3, q4): v ces = 600v ; i c = 100a @ tc = 80c application ? uninterruptible power supplies features ? q1, q2 (high speed trench & field stop igbt4) ? q3, q4 (trench & field stop igbt3) - low voltage drop - low tail current - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant phase leg & dual common emitter power module downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 2-10 1. high speed trench & field stop igbt4 phase leg q1&q2 (per igbt) absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 200 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 160a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 4 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 480 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 9200 pf c oes output capacitance 600 c res reverse transfer capacitance 540 q g gate charge v ge = 15v, i c = 160a v ce = 960v 740 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 600v i c = 160a r g = 3 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 600v i c = 160a r g = 3 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn on energy v ge = 15v v bus = 600v i c = 160a r g = 3 t j = 25c 12.6 mj t j = 150c 15 e off turn off energy t j = 25c 4.8 t j = 150c 9 i sc short circuit data v ge 15v ; v bus = 600v t p 10s ; t j = 150c 600 a r thjc junction to case thermal resistance 0.15 c/w symbol parameter max ratings unit v ces collector - emitter voltage 1200 v i c continuous collector current t c = 25c 300 a t c = 80c 200 i cm pulsed collector current t c = 25c 640 v ge gate C emitter voltage 20 v p d maximum power dissipation 1000 w rbsoa reverse bias safe operating area t j = 150c 320a @ 1100v downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 3-10 diode ratings and characteristics (d1 & d2) (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rm reverse leakage current v r =1200v 200 a i f dc forward current tc = 50c 180 a v f diode forward voltage i f = 150a t j = 25c 1.7 2.2 v t j = 150c 1.65 t rr reverse recovery time i f = 150a v r = 600v di/dt =3800a/s t j = 25c 155 ns t j = 150c 300 q rr reverse recovery charge t j = 25c 14.6 c t j = 150c 30.4 e rr reverse recovery energy t j = 25c 5.2 mj t j = 150c 11 r thjc junction to case thermal resistance 0.32 c/w 2. trench & field stop igbt3 dual common emitter q3&q4 (per igbt) electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 25c 1.5 1.9 v t j = 150c 1.7 v ge ( th ) gate threshold voltage v ge = v ce , i c = 1.5 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na symbol parameter max ratings unit v ces collector - emitter voltage 600 v i c continuous collector current t c = 25c 150 a t c = 80c 100 i cm pulsed collector current t c = 25c 200 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 340 w rbsoa reverse bias safe operating area t j = 150c 200a @ 550v downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 4-10 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 6100 pf c oes output capacitance 390 c res reverse transfer capacitance 190 q g gate charge v ge = 15v, i c = 100a v ce = 300v 1.1 c t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 115 ns t r rise time 45 t d(off) turn-off delay time 225 t f fall time 55 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 130 ns t r rise time 50 t d(off) turn-off delay time 300 t f fall time 70 e on turn on energy v ge = 15v v bus = 300v i c = 100a r g = 3.3 t j = 25c 0.4 mj t j = 150c 0.875 e off turn off energy t j = 25c 2.5 mj t j = 150c 3.5 i sc short circuit data v ge 15v ; v bus = 360v t p 10s ; t j = 150c 500 a r thjc junction to case thermal resistance 0.45 c/w diode ratings and characteristics (d3 & d4) (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 600 v i rm reverse leakage current v r =600v 250 a i f dc forward current tc = 25c 150 a v f diode forward voltage i f = 150a v ge = 0v t j = 25c 1.6 2 t j = 150c 1.5 v t rr reverse recovery time i f = 150a v r = 300v di/dt =3000a/s t j = 25c 130 ns t j = 150c 225 q rr reverse recovery charge t j = 25c 6.5 c t j = 150c 14.5 e r reverse recovery energy t j = 25c 1.6 mj t j = 150c 3.5 r thjc junction to case thermal resistance 0.52 c/w downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 5-10 3. thermal & package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for terminals m5 2 3.5 wt package weight 300 g package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com high speed trench & field stop igbt4 performance curve (per igbt) hard switching zcs zvs 0 30 60 90 120 150 0 40 80 120 160 200 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3 ? t j =150c t c =75c operating frequency vs collector current downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 6-10 output characteristics (v ge =15v) t j =25c t j =150c 0 40 80 120 160 200 240 280 320 0.511.522.533.54 v ce (v) i c (a) output characteristics v ge =9v v ge =13v v ge =15v v ge =20v 0 40 80 120 160 200 240 280 320 0123456 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 40 80 120 160 200 240 280 320 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 12 24 36 48 60 0 40 80 120 160 200 240 280 320 i c (a) e (mj) v ce = 600v v ge = 15v r g = 6 ? t j = 150c eon eoff 5 10 15 20 25 0 2.5 5 7.5 10 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 160a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 80 160 240 320 400 0 300 600 900 1200 v ce (v) i c (a) v ge =15v t j =150c r g =3 ? maximum effective transient thermal impedance, junction to case vs pulse duratio n d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 7-10 diode d1 & d2 performance curve (per diode) forward characteristic of diode t j =25c t j =150c 0 50 100 150 200 250 300 00 . 511 . 522 . 5 v f , anode to cathode voltage (v) i f , forward current (a) maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) energy losses vs collector current 0 4 8 12 16 0 50 100 150 200 250 300 i f (a) err (mj) v ce = 600v r g = 1.6 ? t j = 150c trench & field stop igbt3 performance curve (per igbt) hard switching zcs zvs 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =3.3 ? t j =150c t c =85c operating frequency vs collector current downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 8-10 output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 175 200 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 300v v ge = 15v r g = 3.3 ? t j = 150c eon eoff 0 2 4 6 8 0 5 10 15 20 25 30 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 100a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 0 100 200 300 400 500 600 700 v ce (v) i f (a) v ge =15v t j =150c r g =3.3 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 9-10 diode d3 & d4 performance curve (per diode) energy losses vs collector current 0 1 2 3 4 5 0 50 100 150 200 250 i f (a) e rr (mj) v ce = 300v r g = 3.3 ? t j = 150c maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 50 100 150 200 250 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
APTGLQ200HR120G APTGLQ200HR120G Crev 3 december, 2014 www.microsemi.com 10 - 10 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
|
